Structural studies of ITO films using grazing incidence x-ray diffractometry

被引：0

作者：

M. Quaas

H. Wulff

机构：

[1] University of Greifswald,

[2] Institute of Physical Chemistry,undefined

[3] Soldtmannstrasse 23,undefined

[4] 17489 Greifswald,undefined

[5] Germany,undefined

来源：

Fresenius' Journal of Analytical Chemistry | 1998年 / 361卷

关键词：

Peak Position; Doping Concentration; Resistivity Measurement; Profile Analysis; Lower Angle;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Tin doped indium oxide (ITO) films deposited by e-beam evaporation were investigated using grazing incidence x-ray diffractometry (GIXRD). With increasing doping concentration the x-ray peak positions are shifted to lower angles and the line profiles become broader. Rietveld refinements show that tin in small concentrations occupies regular In sites. Line profile analysis reveals that higher tin concentrations cause an increasing of lattice defects, as grain boundaries and microstrains. The results of the structural investigations correlate with resistivity measurements.

引用

页码：617 / 618

页数：1