Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance

A ferroelectric field-effect transistor (Fe-FET) with two-dimensional MoS2 as the channel material with and without contact resistance is explored and compared. A top-of-the-barrier model along with the ferroelectric model is used to investigate the device performance. The contact resistance can strongly affect the current–voltage characteristic. The Fe-FET with contact resistance requires a higher voltage to reach saturation. Increasing the ferroelectric thickness to a specified value decreases the output resistance, but further increase can compensate this, resulting in high output resistance. Increasing the ferroelectric thickness decreases the mean subthreshold swing in the upward and downward regime. This effect is greater for the downward regime, and the contact resistance can intensify it.