Single-Ended 10T SRAM Cell with High Yield and Low Standby Power

被引：0
作者：
Erfan Shakouri
Behzad Ebrahimi
Nima Eslami
Mohammad Chahardori
机构：
[1] Science and Research Branch,Department of Electrical and Computer Engineering
[2] Islamic Azad University,undefined
来源：
Circuits, Systems, and Signal Processing | 2021年 / 40卷
关键词：
10T SRAM; Low power; Static noise margin (SNM); Stability; Process variation; Yield;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper introduces a 10T single-ended SRAM cell with high stability and low static power. The read static noise margin is augmented by using a Schmitt-trigger inverter and decoupling the storage node from the read bitline by adding one transistor. Since writing “1” is difficult in single-ended SRAM cells, using proper capacitive coupling and also extra pMOS transistor as an access transistor mitigates the problem. To evaluate read, write, and hold yields, we performed 10,000 Monto Carlo simulations in the 32-nm technology, and the results show our cell has 7.5×, 1.4×, and 1.1 × more yields than that of the conventional 6T SRAM cell. The proposed cell also has the least static power consumption. This amount is 1.5× less than the conventional 6T at the supply voltage of 0.5 V.
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页码：3479 / 3499
页数：20
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