Evaluating the performance of a MOSFET dosimeter at diagnostic X-ray energies for interventional radiology

被引：47

作者：

Chida K. ^{[1
]}

Inaba Y. ^{[2
]}

Masuyama H. ^{[1
]}

Yanagawa I. ^{[2
]}

Mori I. ^{[1
]}

Saito H. ^{[1
]}

Maruoka S. ^{[1
]}

Zuguchi M. ^{[1
]}

机构：

[1] Department of Radiological Technology, School of Health Sciences, Tohoku University, Aoba-ku, Sendai 980-8575

[2] Department of Radiology, Tohoku University Hospital, Aoba-ku, Sendai 980-8574

来源：

Radiological Physics and Technology | 2009年 / 2卷 / 1期

关键词：

Exposure dose; Interventional radiology; Metal-oxide semiconductor field effect transistor (MOSFET); Radiation dosimetry; Radiation injury;

D O I：

10.1007/s12194-008-0044-z

中图分类号：

学科分类号：

摘要：

For reducing the risk of skin injury during interventional radiology (IR) procedures, it has been suggested that physicians track patients' exposure doses. The metal-oxide semiconductor field effect transistor (MOSFET) dosimeter is designed to measure patient exposure dose during radiotherapy applications at megavoltage photon energies. Our purpose in this study was to evaluate the feasibility of using a MOSFET dosimeter (OneDose system) to measure patients' skin dose during exposure to diagnostic X-ray energies used in IR. The response of the OneDose system was almost constant at diagnostic X-ray energies, although the sensitivity was higher than that at megavoltage photon energies. We found that the angular dependence was minimal at diagnostic X-ray energies. The OneDose is almost invisible on X-ray images at diagnostic energies. Furthermore, the OneDose is easy to handle. The OneDose sensor performs well at diagnostic X-ray energies, although real-time measurements are not feasible. Thus, the OneDose system may prove useful in measuring patient exposure dose during IR. © 2008 Japanese Society of Radiological Technology and Japan Society of Medical Physics.

引用

页码：58 / 61

页数：3

共 12 条

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