Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

被引：0
|
作者：
D. S. Abramkin
M. O. Petrushkov
E. A. Emelyanov
A. V. Nenashev
M. Yu. Yesin
A. V. Vasev
M. A. Putyato
D. B. Bogomolov
A. K. Gutakovskiy
V. V. Preobrazhenskiy
机构：
[1] Institute of Semiconductor Physics,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
[4] Novosibirsk State University,undefined
来源：
Semiconductors | 2021年 / 55卷
关键词：
molecular-beam epitaxy; InAs/GaP quantum wells; III–V compounds on silicon; surface morphology; photoluminescence; intermixing of materials; elastic strains;
D O I：
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中图分类号：
学科分类号：
摘要：
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收藏
页码：194 / 201
页数：7
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