The effect of plastic deformation in trigonal direction on galvanomagnetic properties of a pure Bi single crystal is studied systematically in the extensive temperature range 4.2–300K. Basic electronic parameters like carrier concentration and carrier mobility have been calculated and an attempt is made to explain various conduction and scattering mechanisms involved. It is observed that the hole mobility of Bi increases significantly from 251.6×103\documentclass[12pt]{minimal}
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\begin{document}$$251.6\times {10^3}$$\end{document} to 883.3×103\documentclass[12pt]{minimal}
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\begin{document}$$883.3\times {10^3}$$\end{document}cm2\documentclass[12pt]{minimal}
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\begin{document}$$\mathrm{{cm}}^2$$\end{document}Volt-1\documentclass[12pt]{minimal}
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\begin{document}$$\mathrm{{Volt}}^{-1}$$\end{document}s-1\documentclass[12pt]{minimal}
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\begin{document}$$\mathrm{{s}}^{-1}$$\end{document} at 4.2K after deformation. This continues to remain higher at all subsequent temperatures. This indicates a greater presence of ‘lighter holes’ implying a shift in the band structure. The energy gap between LC\documentclass[12pt]{minimal}
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\begin{document}$$\mathrm{L_C}$$\end{document} and LV\documentclass[12pt]{minimal}
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\begin{document}$$\mathrm{L_V}$$\end{document} bands is also reported to have increased significantly from 13.79 to 30.53 meV. Further the electron mobility is also found to increase after deformation. The carrier concentration in plastically deformed Bi is almost constant after 70K, followed by a decrease from 230K onwards. An inverse relationship between the mobility and the carrier concentration is seen in the higher temperature region.
