Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET

被引：0

作者：

M. Suguna

V. A. Nithya sree

R. Kaveri

M. Hemalatha

N. B. Balamurugan

D. Sriramkumar

P. Suveetha Dhanaselvam

机构：

[1] Thiagarajar College of Engineering,Department of CSE

[2] Thiagarajar College of Engineering,Department of ECE

[3] National Institute of Technology,Department of ECE

[4] Velammal College of Engineering and Technology,Department of ECE

来源：

Silicon | 2022年 / 14卷

关键词：

Triple material surrounding gate (TMSG); Heterojunction tunnel FET (HJ-TFET); Semiconductor devices; Finite differentiation method (FDM); Work functions; Band to band tunnelling; Short channel effects; Poisson equation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor (HJ-TFET). The theoretical analysis is performed to break down the 2D Poisson Equations into two 1D equations. By implementing Finite Differentiation Method and varying work functions, Triple Material Gates are decomposed into three different individual gates with different work functions. These individual 1D Poisson equations that are decomposed are combined by applying sufficient boundary constraints. As a result, this reduces the difficulty of solving 2D Poisson equations. The expressions of surface potential and drain current are made simpler for the proposed analytical model. Finally, the outcomes of the study are correlated with the TCAD simulation. The proposed model is therefore validated to explain the nature of the Triple Material Surrounding Gate Heterojunction TFETs.

引用

页码：10729 / 10740

页数：11

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