Deposition and dielectric properties of (Al2O3)x(TiO2)1−x thin films

被引：0

作者：

P. Vitanov

A. Harizanova

T. Ivanova

K. Ivanova

机构：

[1] Central Laboratory for Solar Energy and New Energy Sources,Bulgarian Academy of Sciences

来源：

Journal of Materials Science: Materials in Electronics | 2003年 / 14卷

关键词：

TiO2; Thin Film; Al2O3; Dielectric Constant; Electronic Material;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The motivation for this study was to obtain an alloy system (Al2O3)x(TiO2)1−x, that is thermodynamically stable, in direct contact with Si and possessing a high dielectric constant. In the present study, (Al2O3)x(TiO)1−x films were investigated. They were prepared by spin coating from a sol solution, with additional thermal annealing. The chemical composition and stoichiometry of the films was studied by X-ray photoelectron spectroscopy. For the electrical characteristics, MIS capacitors were fabricated. The determined relative dielectric constants were larger than the reported values for pure Al2O3, due to the presence of TiO2.

引用

页码：757 / 758

页数：1