Crystal structure and microwave dielectric properties of middle-temperature-sintered Mg2Si(1-x)VxO4 ceramics

被引：1
作者：
Zhifen Fu
Jianli Ma
Peng Liu
Yang Li
Xiaosen Zhang
机构：
[1] Anhui University of Science and Technology,College of Science
[2] Shaanxi Normal University,College of Physics and Information Technology
来源：
Journal of Electroceramics | 2016年 / 36卷
关键词：
Sintering; Crystal structure; Dielectric properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Mg2Si(1-x)VxO4 (0.0 ≤ x ≤ 0.3) ceramics were fabricated via a conventional solid state reaction route, and their densification behaviors, structure and microwave dielectric properties were investigated systematically. A single phase Mg2SiO4 was obtained for the samples with x ≤ 0.05, and the lattice constant increased with increasing V content due to the larger ionic radius of V5+ than that of Si4+. Moreover, the density and microwave dielectric property strongly depended on the substitution content of V5+ and sintering temperature. Typical, Mg2Si0.8V0.2O4 ceramic obtained a maximum density of 3.24 g/cm3 and exhibited good microwave dielectric properties of εr = 8.8, Q × f = 79900 GHz, and τf = −57.5 ppm/°C at 1180 °C.
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页码：82 / 86
页数：4
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