Crystal structure and microwave dielectric properties of middle-temperature-sintered Mg2Si(1-x)VxO4 ceramics

被引：1

作者：

Zhifen Fu

Jianli Ma

Peng Liu

Yang Li

Xiaosen Zhang

机构：

[1] Anhui University of Science and Technology,College of Science

[2] Shaanxi Normal University,College of Physics and Information Technology

来源：

Journal of Electroceramics | 2016年 / 36卷

关键词：

Sintering; Crystal structure; Dielectric properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Mg2Si(1-x)VxO4 (0.0 ≤ x ≤ 0.3) ceramics were fabricated via a conventional solid state reaction route, and their densification behaviors, structure and microwave dielectric properties were investigated systematically. A single phase Mg2SiO4 was obtained for the samples with x ≤ 0.05, and the lattice constant increased with increasing V content due to the larger ionic radius of V5+ than that of Si4+. Moreover, the density and microwave dielectric property strongly depended on the substitution content of V5+ and sintering temperature. Typical, Mg2Si0.8V0.2O4 ceramic obtained a maximum density of 3.24 g/cm3 and exhibited good microwave dielectric properties of εr = 8.8, Q × f = 79900 GHz, and τf = −57.5 ppm/°C at 1180 °C.

引用

页码：82 / 86

页数：4

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