Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

被引：0
|
作者：
S. Kaschieva
K.G. Stefanov
D. Karpuzov
机构：
[1] Institute of Solid State Physics and Institute of Electronics,
[2] Bulgarian Academy of Sciences,undefined
[3] Blvd. Tzarigradsko Chaussee 72,undefined
[4] Sofia 1784,undefined
[5] Bulgaria,undefined
来源：
Applied Physics A | 1998年 / 66卷
关键词：
PACS: 61.80; 73.20;
D O I：
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学科分类号：
摘要：
structures implanted with 50-keV boron ions is studied by deep-level transient spectroscopy (DLTS) measurements. The DLTS spectra of ion-implanted samples exhibit one peak which corresponds to a deep level located in the forbidden gap of the silicon matrix at Ec-0.40 eV below the conducting band edge. New additional shallower levels are found in the spectra following bombardment by high-energy electrons, the peak intensity being dependent on the irradiation dose. The corresponding activation energy of the created defects, the density of the traps, and the electron-capture cross sections are evaluated.
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页码：561 / 563
页数：2
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