Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

被引：0

作者：

S. Kaschieva

K.G. Stefanov

D. Karpuzov

机构：

[1] Institute of Solid State Physics and Institute of Electronics,

[2] Bulgarian Academy of Sciences,undefined

[3] Blvd. Tzarigradsko Chaussee 72,undefined

[4] Sofia 1784,undefined

[5] Bulgaria,undefined

来源：

Applied Physics A | 1998年 / 66卷

关键词：

PACS: 61.80; 73.20;

D O I：

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学科分类号：

摘要：

structures implanted with 50-keV boron ions is studied by deep-level transient spectroscopy (DLTS) measurements. The DLTS spectra of ion-implanted samples exhibit one peak which corresponds to a deep level located in the forbidden gap of the silicon matrix at Ec-0.40 eV below the conducting band edge. New additional shallower levels are found in the spectra following bombardment by high-energy electrons, the peak intensity being dependent on the irradiation dose. The corresponding activation energy of the created defects, the density of the traps, and the electron-capture cross sections are evaluated.

引用

页码：561 / 563

页数：2