Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

被引：0
|
作者：
S. Kaschieva
K.G. Stefanov
D. Karpuzov
机构：
[1] Institute of Solid State Physics and Institute of Electronics,
[2] Bulgarian Academy of Sciences,undefined
[3] Blvd. Tzarigradsko Chaussee 72,undefined
[4] Sofia 1784,undefined
[5] Bulgaria,undefined
来源：
Applied Physics A | 1998年 / 66卷
关键词：
PACS: 61.80; 73.20;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
structures implanted with 50-keV boron ions is studied by deep-level transient spectroscopy (DLTS) measurements. The DLTS spectra of ion-implanted samples exhibit one peak which corresponds to a deep level located in the forbidden gap of the silicon matrix at Ec-0.40 eV below the conducting band edge. New additional shallower levels are found in the spectra following bombardment by high-energy electrons, the peak intensity being dependent on the irradiation dose. The corresponding activation energy of the created defects, the density of the traps, and the electron-capture cross sections are evaluated.
引用
收藏
页码：561 / 563
页数：2
相关论文
共 50 条
  • [1] Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy
    Kaschieva, S
    Stefanov, KG
    Karpuzov, D
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (05): : 561 - 563
  • [2] Electroluminescence of ion-implanted Si-SiO2 structures
    A. P. Baraban
    P. P. Konorov
    L. V. Malyavka
    A. G. Troshikhin
    Technical Physics, 2000, 45 : 1042 - 1044
  • [3] Electroluminescence of ion-implanted Si-SiO2 structures
    Baraban, AP
    Konorov, PP
    Malyavka, LV
    Troshikhin, AG
    TECHNICAL PHYSICS, 2000, 45 (08) : 1042 - 1044
  • [4] OXIDE TRAPS IN SI-SIO2 STRUCTURES CHARACTERIZED BY TUNNEL EMISSION WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY
    VUILLAUME, D
    BOURGOIN, JC
    LANNOO, M
    PHYSICAL REVIEW B, 1986, 34 (02): : 1171 - 1183
  • [5] Formation of Si nanocrystals in ion implanted Si-SiO2 structures by MeV electron irradiation
    Kaschieva, S.
    Gushterov, A.
    Angelov, Ch
    Dmitriev, S. N.
    17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011), 2012, 356
  • [6] EFFECT OF UV-RADIATION ON ION-IMPLANTED SI-SIO2 STRUCTURES
    KASCHIEVA, S
    NEDEV, N
    DANESH, P
    DJAKOV, A
    RADIATION EFFECTS LETTERS, 1985, 85 (05): : 225 - 229
  • [7] ELECTRON-PARAMAGNETIC-RES IN SI-SIO2 ION-IMPLANTED LAYERS
    BUGAI, AA
    ZARITSKII, IM
    KONCHITS, AA
    LOKSHIN, MM
    LYSENKO, VS
    FIZIKA TVERDOGO TELA, 1983, 25 (10): : 3192 - 3193
  • [8] SPATIAL POSITION OF DEEP LEVELS NEAR SI-SIO2 INTERFACE OF ION-IMPLANTED MOS STRUCTURES
    RUNGE, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1233 - 1236
  • [9] COMPARISON OF NEUTRON AND 2 MEV ELECTRON DAMAGE IN N-TYPE SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
    TOKUDA, Y
    USAMI, A
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (03) : 3564 - 3568
  • [10] DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP
    MARTIN, JM
    GARCIA, S
    MARTIL, I
    GONZALEZDIAZ, G
    CASTAN, E
    DUENAS, S
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) : 5325 - 5330
12345