Tunable band gaps in stanene/MoS2 heterostructures

被引：0

作者：

Dan Liang

Hai He

Pengfei Lu

Liyuan Wu

Chunfang Zhang

Pengfei Guan

Shumin Wang

机构：

[1] Beijing University of Posts and Telecommunications,State Key Laboratory of Information Photonics and Optical Communications

[2] Beijing Computational Science Research Center,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology

[3] Chinese Academy of Sciences,Photonics Laboratory, Department of Microtechnology and Nanoscience

[4] Chalmers University of Technology,undefined

来源：

Journal of Materials Science | 2017年 / 52卷

关键词：

MoS2; Bi2Te3; Local Density Approximation; Dirac Point; MoS2 Monolayer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

First-principles calculations have been performed to investigate the geometric and electronic properties of stanene layer paired with monolayer MoS2 substrate with van der Waals corrections. It is found that the stanene can absorb on the monolayer MoS2 substrate forming stanene/MoS2 heterostructures, indicating a weak interface interaction. The Dirac point of stanene is still preserved on MoS2 substrate, and the band gap is opened about 67 meV due to the influence of the substrate. Moreover, the band gap is able to be effectively modulated under an external strain and a perpendicular electric field. These results are helpful for exploring the tunability of the electronic properties of stanene absorbed on semiconducting substrate.

引用

页码：5799 / 5806

页数：7

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