Variation-tolerant, low-power, and high endurance read scheme for memristor memories

被引：0

作者：

V. Ravi

K. Chitra

S. R. S. Prabaharan

机构：

[1] Vellore Institute of Technology,School of Electronics Engineering

[2] SRM Research Institute,undefined

[3] SRM Institute of Science and Technology,undefined

来源：

Analog Integrated Circuits and Signal Processing | 2020年 / 105卷

关键词：

Memristor; Endurance; Variation-tolerant; Low-power; Reliability;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：83 / 98

页数：15

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