Variation-tolerant, low-power, and high endurance read scheme for memristor memories

被引:0
作者
V. Ravi
K. Chitra
S. R. S. Prabaharan
机构
[1] Vellore Institute of Technology,School of Electronics Engineering
[2] SRM Research Institute,undefined
[3] SRM Institute of Science and Technology,undefined
来源
Analog Integrated Circuits and Signal Processing | 2020年 / 105卷
关键词
Memristor; Endurance; Variation-tolerant; Low-power; Reliability;
D O I
暂无
中图分类号
学科分类号
摘要
引用
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页码:83 / 98
页数:15
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