Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

被引：2
作者：
Liuxian Pan
Shushen Li
Jinlong Liu
Zhichuan Niu
Songlin Feng
Houzhi Zheng
机构：
[1] Yiyang Teacher’s College,Department of Physics
[2] Institute of Semiconductors,National Laboratoly for Superlattlces and Microstructures
[3] Chinese Academy of Sciences,undefined
来源：
Science in China Series A: Mathematics | 2002年 / 45卷 / 5期
关键词：
quantum dot; quantum computing; decoherence;
D O I：
10.1360/02ys9073
中图分类号：
学科分类号：
摘要：
We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.
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页码：666 / 670
页数：4
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