Spin relaxation mechanism of hopping transport in a 2D asymmetric quantum dot array

被引：0
作者：
A. F. Zinov’eva
A. V. Nenashev
A. V. Dvurechenskiĭ
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
来源：
Journal of Experimental and Theoretical Physics | 2007年 / 105卷
关键词：
71.70.Ej; 72.25.Rb; 73.21.La;
D O I：
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学科分类号：
摘要：
Spin relaxation is studied in the hopping conduction mode in 2D arrays of quantum dots (QDs) with structural asymmetry. It is shown that the absence of the “up-down” symmetry in a QD leads to the emergence of a new spin relaxation mechanism in tunneling in a 2D QD array. The difference in spin relaxation mechanisms for symmetric and asymmetric QDs is demonstrated on the basis of theoretical analysis of an elementary event (jump between two tunnel-coupled dots). It is shown that spin flip during tunneling between QDs is the main spin relaxation mechanism in the transport in dense arrays of QDs in Ge placed in weak (1–10 T) magnetic fields.
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页码：388 / 396
页数：8
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