Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor

被引：0

作者：

B. Kotur

V. Babizhetskyy

E. Bauer

F. Kneidinger

A. Danner

L. Leber

H. Michor

机构：

[1] Ivan Franko Lviv National University,Institute of Solid State Physics

[2] Vienna University of Technology,undefined

来源：

Materials Science | 2013年 / 49卷

关键词：

intermetallic compounds; homogeneity range; electron/hole doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effects and feasibility of metal site doping of the tetragonal diamagnetic insulator FeGa3 by Fe/Co, Fe/Mn, and Co/Ni substitutions were investigated by the X-ray electron-probe microanalysis, electrical resistivity, specific heat, and magnetic susceptibility measurements. The substitution of Co for Fe in FeGa3 does not change its structural type and preserves the structure of the binary parent compound ( FeGa3), whereas the solubility of Mn in the FeGa3 -type structure is limited to 3 at.% and a finite solubility of Ni in CoGa3 is not detected.

引用

页码：211 / 219

页数：8