Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor

被引：0
作者：
B. Kotur
V. Babizhetskyy
E. Bauer
F. Kneidinger
A. Danner
L. Leber
H. Michor
机构：
[1] Ivan Franko Lviv National University,Institute of Solid State Physics
[2] Vienna University of Technology,undefined
来源：
Materials Science | 2013年 / 49卷
关键词：
intermetallic compounds; homogeneity range; electron/hole doping;
D O I：
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学科分类号：
摘要：
The effects and feasibility of metal site doping of the tetragonal diamagnetic insulator FeGa3 by Fe/Co, Fe/Mn, and Co/Ni substitutions were investigated by the X-ray electron-probe microanalysis, electrical resistivity, specific heat, and magnetic susceptibility measurements. The substitution of Co for Fe in FeGa3 does not change its structural type and preserves the structure of the binary parent compound ( FeGa3), whereas the solubility of Mn in the FeGa3 -type structure is limited to 3 at.% and a finite solubility of Ni in CoGa3 is not detected.
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页码：211 / 219
页数：8
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