Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions

被引：0
作者：
R. Kh. Akchurin
L. B. Berliner
I. A. Boginskaya
E. G. Gordeev
E. V. Egorova
A. A. Marmalyuk
M. A. Ladugin
M. A. Surnina
机构：
[1] Lomonosov State University of Fine Chemical Technologies,
[2] OOO Sigm Plus,undefined
来源：
Technical Physics | 2014年 / 59卷
关键词：
GaAs; Evaporation Rate; Distribution Histogram; GaAs Surface; Base Size;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) substrate are analyzed, and the possibility of using these factors in the process of metal-organic vapor phase epitaxy (MOVPE) are studied. To refine the temperature dependence of the In evaporation rate, a computational experiment taking into account real MOVPE conditions is conducted. An ultimate change in the composition of In droplets contacting the substrate at a high temperature is estimated, and the thickness and composition of crystallizing In-Ga-As solid solution are calculated. It is shown that the size and density of the droplet array to a great extent depend on the crystallochemical structure of the substrate surface and deposition conditions.
引用
收藏
页码：78 / 84
页数：6
相关论文
共 49 条
  • [1] Sears K(2006)undefined Proc. SPIE 6415 641506-undefined
  • [2] Mokkapati S(2005)undefined J. Appl. Phys. 97 53510-undefined
  • [3] Buda M(2010)undefined J. Phys: Conf. Ser. 245 2078-undefined
  • [4] Chung T(2011)undefined Appl Phys Lett. 98 103702-undefined
  • [5] Walter G(2000)undefined Mater. Res. Soc. Symp. Proc. 583 23-undefined
  • [6] Holonyak N(2004)undefined Appl. Phys. Lett. 85 5893-undefined
  • [7] Bietti S(2009)undefined Nanotechnology 20 5602-undefined
  • [8] Deb P(2010)undefined Nanoscale Res. Lett. 5 308-undefined
  • [9] Bhattacharyya A(2007)undefined Small. 3 235-undefined
  • [10] Ghosh S K(2007)undefined Appl. Phys. Lett. 91 163104-undefined
12345