Nonselective polycrystalline radiation detectors based on higher manganese silicides
被引:0
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作者:
T. S. Kamilov
论文数: 0引用数: 0
h-index: 0
机构:Tashkent State Aviation Institute,
T. S. Kamilov
A. Zh. Khusanov
论文数: 0引用数: 0
h-index: 0
机构:Tashkent State Aviation Institute,
A. Zh. Khusanov
M. K. Bakhadyrkhanov
论文数: 0引用数: 0
h-index: 0
机构:Tashkent State Aviation Institute,
M. K. Bakhadyrkhanov
D. K. Kobilov
论文数: 0引用数: 0
h-index: 0
机构:Tashkent State Aviation Institute,
D. K. Kobilov
机构:
[1] Tashkent State Aviation Institute,
[2] Kokand State Pedagogical Institute,undefined
[3] Tashkent State Polytechnical University,undefined
来源:
Technical Physics Letters
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2002年
/
28卷
关键词:
Radiation;
Silicon;
Manganese;
Response Time;
Time Variation;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
The films of higher manganese silicides (HMSs) obtained by the oblique deposition of manganese vapor onto silicon substrates possess a preferred texture and exhibit anisotropic thermo emf. The main parameters of IR detectors based on these HMS films have been studied. It is shown that the detectors with ∼5-μm-thick HMS films possess an electric resistance of ∼200 Ω and are capable of monitoring time variations of the incident radiation with a characteristic response time of ≤10−6s and a transformation coefficient of 500 μ V/W.