Nonselective polycrystalline radiation detectors based on higher manganese silicides

The films of higher manganese silicides (HMSs) obtained by the oblique deposition of manganese vapor onto silicon substrates possess a preferred texture and exhibit anisotropic thermo emf. The main parameters of IR detectors based on these HMS films have been studied. It is shown that the detectors with ∼5-μm-thick HMS films possess an electric resistance of ∼200 Ω and are capable of monitoring time variations of the incident radiation with a characteristic response time of ≤10−6s and a transformation coefficient of 500 μ V/W.