Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method

被引：0

作者：

Sowmya Palimar

Kasturi V. Bangera

G. K. Shivakumar

机构：

[1] National Institute of Technology Karnataka,Thin Film Laboratory, Physics Department

来源：

Semiconductors | 2012年 / 46卷

关键词：

Zinc Oxide; Transparent Conductor; Gallium Oxide; Dope Film; Room Temperature Conductivity;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 Ω−1 cm−1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8.7 × 103 Ω−1 cm−1 is observed and the optical band gap of the films is decreased from 3.25 to 3.2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band.

引用

收藏

页码：1545 / 1548

页数：3

相关论文

共 50 条

[31] Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition [J].

Kuznetsov, Vladimir L. ;

Vai, Alex T. ;

Al-Mamouri, Malek ;

Abell, J. Stuart ;

Pepper, Michael ;

Edwards, Peter P. .

APPLIED PHYSICS LETTERS, 2015, 107 (23)

[32] A study of Ga2O3 nanomaterials synthesized by the thermal evaporation of GaN powders [J].

Kim, HW ;

Myung, JH ;

Shim, SH .

ECO-MATERIALS PROCESSING & DESIGN VII, 2006, 510-511 :654-657

[33] Cathodoluminescence of undoped and Si-doped ε-Ga2O3 films [J].

Montedoro, V ;

Torres, A. ;

Dadgostar, S. ;

Jimenez, J. ;

Bosi, M. ;

Parisini, A. ;

Fornari, R. .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, 264

[34] Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy [J].

Ranga, Praneeth ;

Bhattacharyya, Arkka ;

Rishinaramangalam, Ashwin ;

Ooi, Yu Kee ;

Scarpulla, Michael A. ;

Feezell, Daniel ;

Krishnamoorthy, Sriram .

APPLIED PHYSICS EXPRESS, 2020, 13 (04)

[35] Growth and characterization of F-doped α-Ga2O3 thin films with low electrical resistivity [J].

Morimoto, Shota ;

Nishinaka, Hiroyuki ;

Yoshimoto, Masahiro .

THIN SOLID FILMS, 2019, 682 :18-23

[36] Investigation of opto-dielectric properties of Ti-doped Ga2O3 thin films [J].

Dakhel, A. A. .

SOLID STATE SCIENCES, 2013, 20 :54-58

[37] Methods for synthesizing β-Ga2O3 thin films beyond epitaxy [J].

Cooke, Jacqueline ;

Sensale-Rodriguez, Berardi ;

Ghadbeigi, Leila .

JOURNAL OF PHYSICS-PHOTONICS, 2021, 3 (03)

[38] X-Ray Luminescence of β-Ga2O3 Thin Films [J].

O. M. Bordun ;

B. O. Bordun ;

I. Yo. Kukharskyy ;

I. I. Medvid .

Journal of Applied Spectroscopy, 2020, 86 :1010-1013

[39] Growth and characterization of β-Ga2O3 thin films on different substrates [J].

Hao, S. J. ;

Hetzl, M. ;

Schuster, F. ;

Danielewicz, K. ;

Bergmaier, A. ;

Dollinger, G. ;

Sai, Q. L. ;

Xia, C. T. ;

Hoffmann, T. ;

Wiesinger, M. ;

Matich, S. ;

Aigner, W. ;

Stutzmann, M. .

JOURNAL OF APPLIED PHYSICS, 2019, 125 (10)

[40] X-Ray Luminescence of β-Ga2O3 Thin Films [J].

Bordun, O. M. ;

Bordun, B. O. ;

Kukharskyy, I. Yo. ;

Medvid, I. I. .

JOURNAL OF APPLIED SPECTROSCOPY, 2020, 86 (06) :1010-1013

← 1 2 3 4 5 →