Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method

被引：0
作者：
Sowmya Palimar
Kasturi V. Bangera
G. K. Shivakumar
机构：
[1] National Institute of Technology Karnataka,Thin Film Laboratory, Physics Department
来源：
Semiconductors | 2012年 / 46卷
关键词：
Zinc Oxide; Transparent Conductor; Gallium Oxide; Dope Film; Room Temperature Conductivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 Ω−1 cm−1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8.7 × 103 Ω−1 cm−1 is observed and the optical band gap of the films is decreased from 3.25 to 3.2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band.
引用
收藏
页码：1545 / 1548
页数：3
相关论文
共 50 条
[21]   Dispersion of Refractive Index of β-Ga2O3 Thin Films [J].
O. M. Bordun ;
I. Yo. Kukharskyy ;
B. O. Bordun ;
V. B. Lushchanets .
Journal of Applied Spectroscopy, 2014, 81 :771-775
[22]   Dispersion of Refractive Index of β-Ga2O3 Thin Films [J].
Bordun, O. M. ;
Kukharskyy, I. Yo ;
Bordun, B. O. ;
Lushchanets, V. B. .
JOURNAL OF APPLIED SPECTROSCOPY, 2014, 81 (05) :771-775
[23]   Low temperature Si doped ZnO thin films for transparent conducting oxides [J].
Clatot, J. ;
Campet, G. ;
Zeinert, A. ;
Labrugere, C. ;
Nistor, M. ;
Rougier, A. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) :2357-2362
[24]   Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD [J].
Gucmann, Filip ;
Tapajna, Milan ;
Husekova, Kristina ;
Dobrocka, Edmund ;
Rosova, Alica ;
Nadazdy, Peter ;
Elias, Peter ;
Egyenes, Fridrich ;
Hrubisak, Fedor ;
Chouhan, Hemendra ;
Keshtkar, Javad ;
Zheng, Xiang ;
Pomeroy, James W. ;
Kuball, Martin ;
Xiao, Xinglin ;
Mao, Yali ;
Meng, Biwei ;
Ma, Guoliang ;
Yuan, Chao .
OXIDE-BASED MATERIALS AND DEVICES XV, 2024, 12887
[25]   Transparent conducting yttrium-doped ZnO thin films deposited by sol-gel method [J].
Yu, Qingjiang ;
Yang, Haibin ;
Fu, Wuyou ;
Chang, Lianxia ;
Xu, Jing ;
Yu, Cuiling ;
Wei, Ronghui ;
Du, Kai ;
Zhu, Hongyang ;
Li, Minghui ;
Zou, Guangtian .
THIN SOLID FILMS, 2007, 515 (7-8) :3840-3843
[26]   Fabrication and characteristics of transparent conducting In2O3-ZnO thin films by ultrasonic spray pyrolysis [J].
Lee, JH ;
Lee, SY ;
Park, BO .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 127 (2-3) :267-271
[27]   Thermal evolution of point defects in indium doped ZnO transparent conducting films [J].
Li, Wanjun ;
Yin, Hongxia ;
Mo, Huilan ;
Lai, Li ;
Fu, Sijie ;
Li, Li ;
Ye, Lijuan ;
Xiong, Yuanqiang ;
Li, Honglin .
THIN SOLID FILMS, 2020, 713
[28]   Transparent conducting Ga-doped ZnO thin films grown by reactive co-sputtering of Zn and GaAs [J].
Singh, Devendra ;
Singh, S. ;
Kumar, Uttam ;
Srinivasa, R. S. ;
Major, S. S. .
THIN SOLID FILMS, 2014, 555 :126-130
[29]   Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures [J].
Orita, M ;
Hiramatsu, H ;
Ohta, H ;
Hirano, M ;
Hosono, H .
THIN SOLID FILMS, 2002, 411 (01) :134-139
[30]   Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method [J].
Ma, J ;
Ji, F ;
Zhang, DH ;
Ma, HL ;
Li, SY .
THIN SOLID FILMS, 1999, 357 (02) :98-101
12345