Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method

被引：0
作者：
Sowmya Palimar
Kasturi V. Bangera
G. K. Shivakumar
机构：
[1] National Institute of Technology Karnataka,Thin Film Laboratory, Physics Department
来源：
Semiconductors | 2012年 / 46卷
关键词：
Zinc Oxide; Transparent Conductor; Gallium Oxide; Dope Film; Room Temperature Conductivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 Ω−1 cm−1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8.7 × 103 Ω−1 cm−1 is observed and the optical band gap of the films is decreased from 3.25 to 3.2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band.
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页码：1545 / 1548
页数：3
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