Modeling, optimization and performance of high-Q MEMS solenoid inductors

被引:0
|
作者
Dong-Ming Fang
Yong Zhou
Xiang-Meng Jing
Xiao-Lin Zhao
Xi-Ning Wang
机构
[1] Research Institute of Micro/Nano Science and Technology,Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, National Key Laboratory of Nano/Micro Fabrication Technology
[2] Shanghai Jiao Tong University,undefined
来源
Microsystem Technologies | 2008年 / 14卷
关键词
Mutual Inductance; Parasitic Capacitance; Parallel Conductor; Conductor Line; Spiral Inductor;
D O I
暂无
中图分类号
学科分类号
摘要
Modeling, optimization and performance of on-chip solenoid inductors is presented. MATLAB is used to get the π-equivalent circuit model parameters. The effects of the geometrical parameters on the inductance and quality factor (Q-factor) are different. Normally, the performance of the inductors can be improved by increasing the coil turns in a way and increasing the length of the conductor, but both of them will occupy more chip area, which is not good for the minimization of the on-chip system. It is desirable to improve the performance of inductor by increasing the height of the via. Of the three types of fabricated inductors covering the same area, the inductors with the height of via 15, 30 and 45 μm have high performance. The self-resonant frequency is up to 10 GHz. The inductances and Q-factors at peak-Q frequency (about 5.8 GHz) are 1.16, 1.35, 1.78 nH and 21.9, 27, 38, respectively.
引用
收藏
页码:185 / 191
页数:6
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