Wetting and infiltration of carbon by liquid silicon

被引：0
作者：
O. Dezellus
S. Jacques
F. Hodaj
N. Eustathopoulos
机构：
[1] LMI—UMR 5615 UCBL,LTPCM—UMR 5614 CNRS
[2] Domaine Universitaire,INPG
来源：
Journal of Materials Science | 2005年 / 40卷
关键词：
Contact Angle; Spreading Rate; Triple Line; Liquid Silicon; Equilibrium Contact Angle;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The wettability of carbon materials by molten silicon was investigated at 1430∘C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed.
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页码：2307 / 2311
页数：4
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