Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields

被引：0
作者：
L. N. Lukyanova
Yu. A. Boikov
O. A. Usov
V. A. Danilov
M. P. Volkov
机构：
[1] Russian Academy of Sciences,Ioffe Institute
来源：
Semiconductors | 2017年 / 51卷
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摘要：
The temperature and magnetic-field dependences of the galvanomagnetic properties of n-Bi2Te3 heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.
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页码：843 / 846
页数：3
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