To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time

被引：39
作者：
Fadeev A.V. [1 ]
Rudenko K.V. [1 ]
机构：
[1] Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow
来源：
Russian Microelectronics | 2021年 / 50卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
Dielectric materials;
D O I：
10.1134/S1063739721050024
中图分类号：
学科分类号：
摘要：
Abstract: In this review of experimental studies, the retention time and endurance of memristor RRAM memory elements based on reversible resistive switching in oxide dielectrics are studied. The influence of external parameters—switching pulses and ambient temperature—as well as internal factors—evolution of the concentration of oxygen vacancies in the filament region, the material, structure; the thickness of the active dielectric layer, material of metal electrodes on the long-term stability of high resistance state (HRS) and the low resistance state (LRS) of the memristor is discussed. © 2021, The Authors(s).
引用
收藏
页码：311 / 325
页数：14
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