Electroluminescence and current-voltage characteristics of n-type porous silicon structures

被引：0
作者：
É. Yu. Buchin
N. A. Laptev
A. V. Prokaznikov
N. A. Rud’
V. B. Svetovoi
A. N. Chirkov
机构：
[1] Yaroslavl’ State University,
来源：
Technical Physics Letters | 1997年 / 23卷
关键词：
Silicon; Porous Silicon; Operating Voltage; Silicon Structure; Porous Silicon Structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An investigation is made of a set of n-type porous-silicon structures exhibiting high electroluminescence efficiency and low degradation, and results are presented. These results demonstrate that operating voltages corresponding to those of standard ceramic-metal-oxide-semiconductor technology can realistically be achieved.
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页码：445 / 447
页数：2
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