Tunable metal–insulator transition in double-layer graphene heterostructures

被引：0
|
作者：
L. A. Ponomarenko
A. K. Geim
A. A. Zhukov
R. Jalil
S. V. Morozov
K. S. Novoselov
I. V. Grigorieva
E. H. Hill
V. V. Cheianov
V. I. Fal’ko
K. Watanabe
T. Taniguchi
R. V. Gorbachev
机构：
[1] School of Physics and Astronomy,Physics Department
[2] University of Manchester,undefined
[3] Manchester Centre for Mesoscience and Nanotechnology,undefined
[4] Institute for Microelectronics Technology,undefined
[5] University of Lancaster,undefined
[6] National Institute for Materials Science,undefined
来源：
Nature Physics | 2011年 / 7卷
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学科分类号：
摘要：
Disorder-induced Anderson localization usually causes conducting materials to become insulating at low temperature. Graphene is a notable exception. But by increasing the carrier density in one graphene layer, a metal–insulator transition can be induced in an isolated second layer stacked above it.
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收藏
页码：958 / 961
页数：3
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