Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

被引：0
作者：
I. S. Shashkin
A. Y. Leshko
D. N. Nikolaev
V. V. Shamakhov
N. A. Rudova
K. V. Bakhvalov
A. V. Lutetskiy
V. A. Kapitonov
V. V. Zolotarev
S. O. Slipchenko
N. A. Pikhtin
P. S. Kop’ev
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2020年 / 54卷
关键词：
single-mode laser; AlGaAs/GaAs; optical dip; higher order modes; peak power;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：484 / 488
页数：4
相关论文
共 62 条
[1]  
Rodrigues G. C.(2014)undefined Phys. Proc. 56 901-undefined
[2]  
Vanhove H.(2018)undefined IEEE Photon. Technol. Lett. 30 545-undefined
[3]  
Duflou J. R.(2017)undefined IEEE Photon. Technol. Lett. 29 2005-undefined
[4]  
Wilkens M.(2015)undefined Semiconductors 49 1383-undefined
[5]  
Wenzel H.(2014)undefined Quantum Electron. 44 993-undefined
[6]  
Fricke J.(2019)undefined Opt. Quantum Electron. 51 60-undefined
[7]  
Maabdorf A.(2002)undefined Opt. Lett. 27 303-undefined
[8]  
Ressel P.(2011)undefined Semiconductors 45 1378-undefined
[9]  
Strohmaier S.(2014)undefined Laser Phys. 24 105001-undefined
[10]  
Knigge A.(undefined)undefined undefined undefined undefined-undefined
1234567