Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters

Results of a comparative study of the internal quantum yield of AlGaAs/GaAs photovoltaic converters (PVCs) with variable position of the array of vertically coupled InGaAs quantum dots (QDs) are presented. It is established that the QD array placed immediately at the i-region/base interface does not change the PVC sensitivity compared to that for QDs arranged inside the i-region of the p-n junction. However, the QD array shifted to the base or the back potential barrier decreases the contribution of a base layer to the PVC photocurrent and reduces the photosensitivity of the QD-based medium.