Depth Profiling of Layered Si−O−Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry

被引：0
|
作者：
V. I. Bachurin
N. S. Melesov
A. A. Mironenko
E. O. Parshin
A. S. Rudy
S. G. Simakin
A. B. Churilov
机构：
[1] Yaroslavl Branch of the Institute of Physics and Technology,
[2] Russian Academy of Sciences,undefined
来源：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2019年 / 13卷
关键词：
depth profiling; secondary-ion mass spectrometry; Rutherford backscattering spectrometry;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：300 / 305
页数：5
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