I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

被引：0
作者：
P. A. Ivanov
I. V. Grekhov
O. I. Kon’kov
A. S. Potapov
T. P. Samsonova
T. V. Semenov
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
Semiconductors | 2011年 / 45卷
关键词：
Barrier Height; Versus Characteristic; Schottky Barrier; Space Charge Region; Schottky Diode;
D O I：
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学科分类号：
摘要：
The I-V characteristics of high-voltage 4H-SiC diodes with a Schottky barrier ∼1.1 eV in height are measured and analyzed. The forward I-V characteristics proved to be close to “ideal” in the temperature range of 295–470 K. The reverse I-V characteristics are adequately described by the model of thermionic emission at the voltages to 2 kV in the temperature range of 361–470 K if, additionally, a barrier lowering with an increase in the band bending in the semiconductor is taken into account.
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页码：1374 / 1377
页数：3
相关论文
共 17 条
  • [1] Ivanov P. A.(2010)undefined Semiconductors 44 653-undefined
  • [2] Grekhov I. V.(1992)undefined Phys. Rev. B 45 13509-undefined
  • [3] Potapov A. S.(1966)undefined Solid State Electron. 9 695-undefined
  • [4] Samsonova T. P.(2005)undefined Semiconductors 39 861-undefined
  • [5] Il’inskaya N. D.(1973)undefined Solid State Electron. 16 365-undefined
  • [6] Kon’kov O. I.(undefined)undefined undefined undefined undefined-undefined
  • [7] Serebrennikova O. Yu.(undefined)undefined undefined undefined undefined-undefined
  • [8] Tung R. T.(undefined)undefined undefined undefined undefined-undefined
  • [9] Padovani F. A.(undefined)undefined undefined undefined undefined-undefined
  • [10] Stratton R.(undefined)undefined undefined undefined undefined-undefined
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