Optical properties of PbTe doped with Nd

被引：0
作者：
M. V. Nikolic
K. M. Paraskevopoulos
T. Ivetić
T. T. Zorba
S. S. Vujatovic
E. Pavlidou
V. Blagojevic
A. Bojicic
O. S. Aleksic
N. Nikolic
W. König
P. M. Nikolic
机构：
[1] Institute for Multidisciplinary Research,Physics Department, Solid State Section
[2] Aristotle University of Thessaloniki,Faculty of Electrical Engineering
[3] Institute of Technical Sciences of SASA,undefined
[4] University of Belgrade,undefined
[5] Max Planck Institut für Festkörperforschung,undefined
来源：
Journal of Materials Science | 2010年 / 45卷
关键词：
Dopant Concentration; Local Mode; PbTe; Plasma Minimum; Lead Telluride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Single crystals of lead telluride doped with Nd were synthesized using the Bridgeman method. Room temperature far infrared reflectivity spectra were measured for PbTe samples with Nd content in the range 0.2–0.9 at.%. Optical reflectivity in the far infrared range was measured in the temperature range between 10 and 300 K for a highly polished PbTe sample with 0.6 at.% Nd. The experimental diagrams were numerically analyzed with a fitting procedure using a modified plasmon–phonon model. Two local modes were noted and their origin was discussed. Optical electron mobility was calculated for all analyzed samples.
引用
收藏
页码：5910 / 5914
页数：4
相关论文
共 140 条
[1]  
Hoang K(2007)undefined Phys Rev B 76 115432-undefined
[2]  
Mahanti SD(2006)undefined Semiconductors 40 893-undefined
[3]  
Jena P(1999)undefined Infrared Phys Technol 40 453-undefined
[4]  
Skipetrov EP(1998)undefined Semiconductors 32 608-undefined
[5]  
Zvereva EA(2000)undefined Phys Rev B 61 R14889-undefined
[6]  
Dmitriev NN(1989)undefined Sov Phys Semicond 23 151-undefined
[7]  
Golubev AV(2007)undefined J Alloys Compd 442 324-undefined
[8]  
Slynko VE(2008)undefined J Optoelectron Adv Mater 10 145-undefined
[9]  
Romčević N(1985)undefined J Appl Phys 57 1997-undefined
[10]  
Romčević M(1998)undefined Semiconductors 32 716-undefined
12345678910