Instability of current and N-shaped current-voltage characteristic in a silicon p-i-n diode subjected to a magnetic field

被引:0
作者
I. K. Kamilov
K. M. Aliev
B. G. Aliev
Kh. O. Ibragimov
N. S. Abakarova
机构
[1] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center
来源
Semiconductors | 2007年 / 41卷
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73.40.Lg;
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摘要
Experimental results of studying the p-i-n structures based on n-Si with the resistivity ρ = 120 Ω cm are reported. The dynamic S-shaped current-voltage characteristics were studied at various values of the applied magnetic field. Initiation of the current and voltage large-amplitude oscillations was observed at a magnetic field of 2 kOe. A further increase in the magnetic field leads to an increase in the amplitude of oscillations and to the appearance of a high-frequency oscillation mode with the frequency of ∼ 3 MHz; this mode modulates the low-frequency mode. A magnetic field in excess of 5 kOe reduces the amplitude of both modes of current oscillations and completely suppresses oscillations in the circuit so that the S-shaped form of the current-volt-age characteristic disappears. In accordance with the theory, experimental current-voltage characteristics were observed for the first time to feature portions with negative differential N-type conductivity in the presence of a high magnetic field and with the chosen sample configuration and relevant values of electric field.
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页码:965 / 969
页数:4
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