Low energy electron attachment to C60

被引:0
作者
V. S. Prabhudesai
D. Nandi
E. Krishnakumar
机构
[1] Tata Institute of Fundamental Research,
来源
The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics | 2005年 / 35卷
关键词
Fullerene; Electron Energy; Molecular Beam; Quantum Computing; Activation Barrier;
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学科分类号
摘要
Low energy electron attachment to the fullerene molecule (C60) and its temperature dependence are studied in a crossed electron beam–molecular beam experiment. We observe the strongest relative signal of C60 anion near 0 eV electron energy with respect to higher energy resonant peaks confirming the contribution of s-wave capture to the electron attachment process and hence the absence of threshold behavior or activation barrier near zero electron energy. While we find no temperature dependence for the cross-section near zero energy, we observe a reduction in the cross-sections at higher electron energies as the temperature is increased, indicating a decrease in lifetime of the resonances at higher energies with increase in temperature.
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页码:261 / 266
页数:5
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