Investigation of microstructural evolution and electrical properties for Ni-Sn transient liquid-phase sintering bonding

被引:0
作者
Hong-Liang Feng
Ji-Hua Huang
Jian Yang
Shao-Kun Zhou
Rong Zhang
Yue Wang
Shu-Hai Chen
机构
[1] University of Science and Technology Beijing,School of Materials Science and Engineering
来源
Electronic Materials Letters | 2017年 / 13卷
关键词
transient liquid-phase sintering; bonding layer; void evolution; intermetalliccompound; resistivity;
D O I
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中图分类号
学科分类号
摘要
Ni/Ni-Sn/Ni sandwiched simulated package structures were successfully bonded under low temperature and low pressure by Ni-Sn transient liquid-phase sintering bonding. The results show that, after isothermally holding for 240 min at 300 °C and 180 min at 340 °C, Sn was completely transformed into Ni3Sn4 intermetallic compounds. When the Ni3Sn4 phases around Ni particles were pressed together, the porosity of the bonding layer increased, which obviously differed from the normal sintering densification process. With further analysis of this phenomenon, it was found that large volume shrinkage (14.94% at 340 °C) occurred when Ni reacted with Sn to form Ni3Sn4, which caused void formation. A mechanistic model of the microstructural evolution in the bonding layer was proposed. Meanwhile, the resistivity of the bonding layer was measured and analyzed by using the four-probe method; the microstructural evolution was well reflected by the resistivity of the bonding layer. The relationship between the resistivity and microstructure was also discussed in detail.[graphic not available: see fulltext]
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页码:489 / 496
页数:7
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共 85 条
[1]  
Iwasaki T.(2013)undefined IEEE Electr. Dev. L. 34 1175-undefined
[2]  
Hoshino Y.(2009)undefined Phys. Status Solidi A. 206 2329-undefined
[3]  
Tsuzuki K.(2012)undefined IEEE Electr. Dev. L. 33 985-undefined
[4]  
Kato H.(2005)undefined Acta Mater. 53 2019-undefined
[5]  
Makino T.(2013)undefined J. Electron. Mater. 42 3582-undefined
[6]  
Ogura M.(2013)undefined Metall. Mater. Trans B. 44B 407-undefined
[7]  
Takeuchi D.(2014)undefined Electron. Mater Lett. 10 293-undefined
[8]  
Okushi H.(2015)undefined J. Mater. Sci.-Mater. El. 26 9236-undefined
[9]  
Yamasaki S.(2009)undefined IMPAS J. Microelectron. Electron. Packag. 6 66-undefined
[10]  
Hatano M.(2013)undefined J. Electrochem. Soc. 160 315-undefined