A high-temperature Auger electron spectrometer setup and its application to reactive wetting experiments at 1700 K

被引:0
作者
L. D. Alphei
C. Dobbe
V. Becker
J. A. Becker
机构
[1] Gottfried Wilhelm Leibniz Universität Hannover,Institut für Physikalische Chemie und Elektrochemie
来源
Journal of Materials Science | 2015年 / 50卷
关键词
Contact Angle; Auger Electron Spectroscopy; Molten Silicon; Reactive Wetting; Primary Electron Beam;
D O I
暂无
中图分类号
学科分类号
摘要
A high-temperature Auger electron spectroscopy setup and its in situ application to sessile drop experiments of molten silicon on oxide substrates are presented. The experimental setup allows for measurements of previously inaccessible surface reactions at temperatures up to 1700 K. Auger electron spectra of SiO2, MgO, and liquid Si are presented. Furthermore, the areas of the substrates that have been transiently wetted by the silicon melt are investigated. The results are discussed with respect to questions concerning reactive wetting of oxides by metal melts, which are important for the material science of joining processes.
引用
收藏
页码:3175 / 3182
页数:7
相关论文
共 77 条
[1]  
Szalkowski FJ(1972)Auger electron spectroscopy investigations of the surface chemical composition of vanadium, the vanadium oxides, and oxidized vanadium: chemical shift and peak intensity analysis J Chem Phys 56 6097-2495
[2]  
French TM(1970)Composition and surface structure of the (0001) face of.alpha.-alumina by low-energy electron diffraction J Phys Chem 74 2489-32
[3]  
Somorjai GA(2007)Editorial J Mater Sci 43 1-8260
[4]  
Jadoon AK(2007)Brazing of yttria-stabilized zirconia (YSZ) to stainless steel using Cu, Ag, and Ti-based brazes J Mater Sci 43 23-991
[5]  
Singh M(2012)Wetting of ceramics by molten silicon and silicon alloys: a review J Mater Sci 47 8247-948
[6]  
Shpargel TP(2002)Spreading of Cu–Si alloys on oxidized SiC in vacuum: experimental results and modelling Acta Mater 50 979-7359
[7]  
Asthana R(2008)Generalized surface thermodynamics with application to nucleation Philos Mag 88 927-5698
[8]  
Drevet B(2013)Reaction enhanced wetting of quartz by silicon droplets and its instabilities J Mater Sci 48 7350-147
[9]  
Eustathopoulos N(2003)Czochralski’s creative mistake: a milestone on the way to the Gigabit Era Angew Chem Int Ed 42 5684-371
[10]  
Dezellus O(1999)Study of oxygen transport in Czochralski growth of silicon Microelectron Eng 45 135-2976