Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system

被引：0
作者：
A. K. Gutakovskii
A. V. Katkov
M. I. Katkov
O. P. Pchelyakov
M. A. Revenko
机构：
[1] Siberian Branch of the Russian Academy of Sciences,Institute of Semiconductor Physics
来源：
Technical Physics Letters | 1998年 / 24卷
关键词：
GaAs; Gallium; Germanium; Arsenide; Gallium Arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An investigation was made of the formation of antiphase boundaries in a GaAs/Ge/GaAs(001) system using accurately oriented substrates and substrates misoriented by 3° and 5° in the [110] direction. It was shown that growth of germanium on a misoriented gallium arsenide surface leads to the formation of diatomic steps of height a0/2 and therefore results in the absence of any antiphase boundaries in a GaAs film grown on this surface. Conditions required to obtain a vicinal Ge surface consisting of monatomic steps of height a0/4, whose presence leads to the formation of antiphase boundaries during GaAs growth, are determined.
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页码：949 / 951
页数：2
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