A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition

被引：0

作者：

A. S. Gudovskikh

D. A. Kudryashov

A. I. Baranov

A. V. Uvarov

I. A. Morozov

机构：

[1] Zh.I. Alferov St. Petersburg National Research Academic University,

[2] Russian Academy of Sciences,undefined

[3] St. Petersburg Electrotechnical University “LETI”,undefined

来源：

Technical Physics Letters | 2021年 / 47卷

关键词：

boron phosphide; silicon; selective contact; solar cell.;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：96 / 98

页数：2

共 77 条

[1]

Yoshikawa K.(2017)undefined Nat. Energy 2 17032-undefined

[2]

Kawasaki H.(2016)undefined Nat. Energy 1 15031-undefined

[3]

Yoshida W.(1984)undefined J. Cryst. Growth 70 507-undefined

[4]

Irie T.(2012)undefined ECS J. Solid State Sci. Technol. 1 250-undefined

[5]

Konishi K.(2014)undefined J. Appl. Phys. 115 044508-undefined

[6]

Nakano K.(2008)undefined Appl. Phys. Express 1 091201-undefined

[7]

Uto T.(2015)undefined Sol. Energy Mater. Sol. Cells 141 14-undefined

[8]

Adachi D.(1996)undefined J. Cryst. Growth 158 49-undefined

[9]

Kanematsu M.(1971)undefined J. Appl. Phys. 42 420-undefined

[10]

Uzu H.(1960)undefined Phys. Rev. Lett. 4 282-undefined