Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal

被引：0
作者：
S. A. Kukushkin
A. V. Osipov
机构：
[1] Institute of Problems of Mechanical Engineering,
[2] Russian Academy of Sciences,undefined
[3] St. Petersburg National Research University of Information Technologies,undefined
[4] Mechanics and Optics,undefined
来源：
Physics of the Solid State | 2019年 / 61卷
关键词：
silicon carbide; diffusion; ab initio simulation; epitaxy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：2338 / 2341
页数：3
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