Structural properties of TiO2–WO3 thin films prepared by r.f. sputtering

被引:0
作者
S. Komornicki
M. Radecka
P. Sobaś
机构
[1] AGH – University of Science and Technology,Faculty of Materials Science and Ceramics
来源
Journal of Materials Science: Materials in Electronics | 2004年 / 15卷
关键词
TiO2; Scanning Electron Microscopy; Titanium; Phase Transition; Tungsten;
D O I
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学科分类号
摘要
TiO2–WO3 thin films were prepared by radio frequency (r.f.) reactive sputtering from metallic target. Structural and morphological properties of the thin films have been studied through X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The influence of the annealing on the phase composition TiO2–WO3 system was studied. The binding energies of titanium and tungsten are characteristic for Ti4+ and W6+. The influence of tungsten on anatase–rutile phase transition in TiO2 was observed. The structural modeling has been performed to account the preferred orientation in tungsten doped titanium oxide.
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页码:527 / 531
页数:4
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