Heterostructure solar cells

被引:0
作者
V. M. Andreev
机构
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源
Semiconductors | 1999年 / 33卷
关键词
Radiation; Solid Solution; GaAs; Solar Cell; Magnetic Material;
D O I
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中图分类号
学科分类号
摘要
Heterostructure solar cells based on III–V compounds are studied. Record-high efficiencies are obtained for solar cells based on AlGaAs/GaAs heterostructures: 24.6% for 100-fold concentration of sunlight in outer space (AM0) and 27.5% for 100-fold concentration of the light on the ground (AM1.5). A substantial increase in radiation resistance is obtained for solar cells with a built-in Bragg mirror. Cascaded solar cells with efficiencies of up to 32% for 100 suns (AM1.5) are created and studied; in these cells the upper wide-gap materials are infrared transparent elements based on GaAs, while the lower narrow-band elements are made of GaSb or an InGaAs solid solution.
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页码:942 / 945
页数:3
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