Effect of the atomic composition of the surface on the electron surface states in topological insulators A2VB3VI

被引：0

作者：

S. V. Eremeev

Yu. M. Koroteev

E. V. Chulkov

机构：

[1] Russian Academy of Sciences,Institute of Strength Physics and Materials Science, Siberian Branch

[2] Tomsk State University,Departamento de Física de Materiales, UPV/EHU

[3] Donostia International Physics Center (DIPS) and CFM,undefined

[4] Centro Mixto CSIC-UPV/EHU,undefined

来源：

JETP Letters | 2010年 / 91卷

关键词：

JETP Letter; Orbit Interaction; Topological Insulator; Chalcogen; Dirac Cone;

D O I：

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中图分类号：

学科分类号：

摘要：

The results of the theoretical investigation of the surface electronic structure of A2VB3VI compounds containing topologically protected surface states are reported. The ideal Bi2Te3, Bi2Se3, and Sb2Te3 surfaces and surfaces with an absent external layer of chalcogen atoms, which were observed experimentally as monolayer terraces, have been considered. It has been shown that the discrepancy between the calculated Fermi level and the value measured in the photoemission experiments can be attributed to the presence of the “dangling bond” states on the surface of the terraces formed by semimetal atoms. The fraction of such terraces on the surface has been estimated.

引用

页码：387 / 391

页数：4

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