Silicon Nitride Thin Windows for Biomedical Microdevices

被引：0
作者：
Dino R. Ciarlo
机构：
[1] Lawrence Livermore National Laboratory,
来源：
Biomedical Microdevices | 2002年 / 4卷
关键词：
silicon nitride; thin windows; microfabrication;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report on several years of experience with the design, fabrication and use of silicon nitride thin windows. The thickness used has ranged from 20 nm to several micrometers. The window area has ranged from an edge dimension of a few micrometers to a few centimeters. Using IC technology, these windows can be mass-produced in an efficient manner. Their tensile stress can be adjusted to range from 100 MPa to 1 GPa, and they can be patterned to contain holes and slots.
引用
收藏
页码：63 / 68
页数：5
相关论文
共 50 条
  • [41] Review-Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications
    Kaloyeros, Alain E.
    Pan, Youlin
    Goff, Jonathan
    Arkles, Barry
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (06)
  • [42] Silicon Nitride in Silicon Photonics
    Blumenthal, Daniel J.
    Heideman, Rene
    Geuzebroek, Douwe
    Leinse, Arne
    Roeloffzen, Chris
    [J]. PROCEEDINGS OF THE IEEE, 2018, 106 (12) : 2209 - 2231
  • [43] Ultrafast deposition of silicon nitride and semiconductor silicon thin films by hot wire chemical vapor deposition
    Schropp, R. E. I.
    van der Werf, C. H. M.
    Verlaan, V.
    Rath, J. K.
    Li, H.
    [J]. THIN SOLID FILMS, 2009, 517 (10) : 3039 - 3042
  • [44] Mechanical properties of magnesium silicon nitride - Silicon nitride ceramics
    Itatani, K
    Asoo, E
    Hayashi, H
    Hirao, K
    Koda, S
    [J]. SILICATES INDUSTRIELS, 2004, 69 (7-8): : 275 - 280
  • [45] Solution processed IZTO thin film transistor on silicon nitride dielectric layer
    Kim, Bong-Jin
    Kim, Hyung-Jun
    Yoon, Tae-Sik
    Kim, Yong-Sang
    Lee, Doo-Hyoung
    Choi, Youngmin
    Ryu, Byung-Hwan
    Lee, Hyun Ho
    [J]. JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2011, 17 (01) : 96 - 99
  • [46] Characterization of silicon nitride thin films on Si and overlayer growth of Si and Ge
    Wang, XS
    Li, ZQ
    Lei, W
    Hu, YF
    Zhai, GJ
    Yang, JS
    Wang, YQ
    Fung, KK
    Tang, JC
    Wang, X
    Cue, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (6B): : 4292 - 4298
  • [47] Characterization of mechanical properties of silicon nitride thin films for MEMS devices by nanoindentation
    Huang, H
    Hu, XZ
    Liu, Y
    Bush, M
    Winchester, K
    Musca, C
    Dell, J
    Faraone, L
    [J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2005, 21 : 13 - 16
  • [48] Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride
    Cil, K.
    Zhu, Y.
    Li, J.
    Lam, C. H.
    Silva, H.
    [J]. THIN SOLID FILMS, 2013, 536 : 216 - 219
  • [49] Phosphorous diffusion through silicon nitride thin film for selective emitter application
    Crampette, Laurent
    Poulain, Gilles
    Cuminal, Yvan
    Foucaran, Alain
    Pellegrin, Yvon
    Semmache, Bachir
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, 2012, 9 (10-11): : 2131 - 2133
  • [50] Residual Stress Dependency on Wafer Location of Thin Film PECVD Silicon Nitride
    Godin, Jeremy R.
    Won, Seong-hoon P.
    Nieva, Patricia M.
    Linh Ngo Phong
    Pope, Tim
    [J]. NANOTECHNOLOGY 2011: ADVANCED MATERIALS, CNTS, PARTICLES, FILMS AND COMPOSITES, NSTI-NANOTECH 2011, VOL 1, 2011, : 108 - 111
12345