Silicon Nitride Thin Windows for Biomedical Microdevices

被引:0
作者
Dino R. Ciarlo
机构
[1] Lawrence Livermore National Laboratory,
来源
Biomedical Microdevices | 2002年 / 4卷
关键词
silicon nitride; thin windows; microfabrication;
D O I
暂无
中图分类号
学科分类号
摘要
We report on several years of experience with the design, fabrication and use of silicon nitride thin windows. The thickness used has ranged from 20 nm to several micrometers. The window area has ranged from an edge dimension of a few micrometers to a few centimeters. Using IC technology, these windows can be mass-produced in an efficient manner. Their tensile stress can be adjusted to range from 100 MPa to 1 GPa, and they can be patterned to contain holes and slots.
引用
收藏
页码:63 / 68
页数:5
相关论文
共 50 条
  • [31] Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy
    Barres, T.
    Tribollet, B.
    Stephan, O.
    Montigaud, H.
    Boinet, M.
    Cohin, Y.
    ELECTROCHIMICA ACTA, 2017, 227 : 1 - 6
  • [32] Comparison of tensile and bulge tests for thin-film silicon nitride
    Edwards R.L.
    Coles G.
    Sharpe Jr. W.N.
    Experimental Mechanics, 2004, 44 (1) : 49 - 54
  • [33] Influence of Annealing and Sputtering Ambience on the Photoluminescence of Silicon Nitride Thin Films
    Jia Xiao-yun
    Xu Zheng
    Zhao Su-ling
    Zhang Fu-jun
    Zhao De-wei
    Tang Yu
    Li Yuan
    Zhou Chun-lan
    Wang Wen-jing
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28 (11) : 2494 - 2497
  • [34] Effects of humidity on nano-oxidation of silicon nitride thin film
    Hsu, Hsun-Feng
    Lee, Chien-Wei
    ULTRAMICROSCOPY, 2008, 108 (10) : 1076 - 1080
  • [35] Silicon nitride thin film electrode for lithium-ion batteries
    Suzuki, Naoki
    Cervera, Rinlee Butch
    Ohnishi, Tsuyoshi
    Takada, Kazunori
    JOURNAL OF POWER SOURCES, 2013, 231 : 186 - 189
  • [36] DISSOLUTION BEHAVIOR OF SILICON NITRIDE THIN FILMS IN A SIMULATED OCULAR ENVIRONMENT
    Schade, Christoph
    Phan, Alex
    Joslin, Kevin
    Phuong Truong
    Talke, Frank
    PROCEEDINGS OF THE ASME 2020 29TH CONFERENCE ON INFORMATION STORAGE AND PROCESSING SYSTEMS (ISPS2020), 2020,
  • [37] Thermal expansion and atomic structure of amorphous silicon nitride thin films
    Saito, Y
    Kagiyama, T
    Nakajima, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (10A): : L1175 - L1177
  • [38] Formation of silicon nitride thin films by RF ion plating and their properties
    Kanemoto, N
    Inoue, T
    Daikoku, T
    Baba, K
    MATERIALS TRANSACTIONS JIM, 1996, 37 (05): : 1056 - 1060
  • [39] Electroless Plating of Thin Gold Films Directly onto Silicon Nitride Thin Films and into Micropores
    Whelan, Julie C.
    Karawdeniya, Buddini Iroshika
    Nuwan, Y. M.
    Bandara, D. Y.
    Velleco, Brian D.
    Masterson, Caitlin M.
    Dwyer, Jason R.
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (14) : 10952 - 10957
  • [40] Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces
    Gritsenko, VA
    Shaposhnikov, AV
    Kwok, WM
    Wong, H
    Jidomirov, GM
    THIN SOLID FILMS, 2003, 437 (1-2) : 135 - 139