Crystallization of amorphous hydrogenated silicon films deposited under various conditions

被引：0
|
作者：
O. A. Golikova
E. V. Bogdanova
U. S. Babakhodzhaev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2002年 / 36卷
关键词：
Silicon; Crystallization; Silane; Magnetic Material; Basic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The possibility of using the magnetron-assisted silane decomposition technique for the deposition of a-Si:H films as the basic materials for the production of polysilicon is analyzed. It is shown how specific features of the film structure affect the crystallization process.
引用
收藏
页码：1180 / 1183
页数：3
相关论文
共 50 条
  • [1] Crystallization of amorphous hydrogenated silicon films deposited under various conditions
    Golikova, OA
    Bogdanova, EV
    Babakhodzhaev, US
    SEMICONDUCTORS, 2002, 36 (10) : 1180 - 1183
  • [2] Crystallization of hydrogenated amorphous-nanocrystalline silicon films under high-pressure annealing
    Tyschenko, Ida
    Volodin, Vladimir
    Misiuk, Andrzej
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6, 2012, 9 (06): : 1487 - 1489
  • [3] Laser crystallization of compensated hydrogenated amorphous silicon thin films
    Saleh, R.
    Nickel, N. H.
    Maydell, K. V.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1003 - 1007
  • [4] Stress induced crystallization of hydrogenated amorphous silicon
    Park, Jungwon
    Kwon, Seyeoul
    Jun, Seung-Ik
    Ivanov, Ilia N.
    Cao, Jinbo
    Musfeldt, Janice L.
    Rack, Philip D.
    THIN SOLID FILMS, 2009, 517 (11) : 3222 - 3226
  • [5] Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealing
    Basa, D. K.
    Ambrosone, G.
    Coscia, U.
    Setaro, A.
    APPLIED SURFACE SCIENCE, 2009, 255 (10) : 5528 - 5531
  • [6] Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure
    G. J. Adriaenssens
    W. Grevendonk
    O. A. Golikova
    Semiconductors, 1998, 32 : 109 - 111
  • [7] Crystallization of hydrogenated amorphous silicon-carbon films by means of laser treatments
    Ambrosone, G
    Coscia, U
    Lettieri, S
    Maddalena, P
    Minarini, C
    Parisi, V
    Schutzmann, S
    APPLIED SURFACE SCIENCE, 2005, 247 (1-4) : 471 - 476
  • [8] Study of polysilicon produced by solid phase crystallization of hydrogenated amorphous silicon deposited at high rate
    Farhi, G
    Aoucher, M
    Mohammed-Brahim, T
    SOLID STATE PHENOMENA, 1999, 67-8 : 217 - 222
  • [9] Diffusion of chromium in thin hydrogenated amorphous silicon films
    S. K. Persheyev
    P. R. Drapacz
    M. J. Rose
    A. G. Fitzgerald
    Semiconductors, 2004, 38 : 344 - 346
  • [10] Diffusion of chromium in thin hydrogenated amorphous silicon films
    Persheyev, SK
    Drapacz, PR
    Rose, MJ
    Fitzgerald, AG
    SEMICONDUCTORS, 2004, 38 (03) : 344 - 346
12345