Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

被引：0

作者：

Jaeun Eom

In Hak Lee

Jung Yun Kee

Minhyun Cho

Jeongdae Seo

Hoyoung Suh

Hyung-Jin Choi

Yumin Sim

Shuzhang Chen

Hye Jung Chang

Seung-Hyub Baek

Cedomir Petrovic

Hyejin Ryu

Chaun Jang

Young Duck Kim

Chan-Ho Yang

Maeng-Je Seong

Jin Hong Lee

Se Young Park

Jun Woo Choi

机构：

[1] Korea Institute of Science and Technology (KIST),Center for Spintronics

[2] Seoul National University,Department of Physics and Astronomy

[3] Soongsil University,Department of Physics

[4] Kyung Hee University,Department of Physics and Department of Information Display

[5] KAIST,Department of Physics

[6] Korea Institute of Science and Technology (KIST),Advanced Analysis Center

[7] Korea Institute of Science and Technology (KIST),Electronic Materials Research Center

[8] Chung-Ang University,Department of Physics

[9] Brookhaven National Laboratory,Condensed Matter Physics and Materials Science Department

[10] Stony Brook University,Department of Physics and Astronomy

[11] Soongsil University,Origin of Matter and Evolution of Galaxies (OMEG) Institute

来源：

Nature Communications | / 14卷

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摘要：

We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

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